The Samsung MZ-VAP1T0BW 1TB is an M.2 2280 NVMe PCIe 5.0 x4 solid-state drive manufactured by Samsung as part of their 9100 PRO Series. This cutting-edge drive features a Samsung Presto S4LY027 5-core controller, 236-layer TLC V-NAND, 1 GB low-power DDR4X cache, delivers random read and write speeds up to 1,850,000 and 2,600,000 IOPS, and supports AES 256-bit hardware encryption with 600 TB Written endurance.
Specifications
Model Number: MZ-VAP1T0BW
Brand: Samsung
Alt Part Number(s): MZ-VAP1T0BW
Product Type: Solid State Drive
Technical Description
Brand: Samsung
Model: MZ-VAP1T0BW
Series: 9100 PRO
Interface: PCIe 5.0 x4; NVMe 2.0
Form Factor: M.2 2280 (Single-Sided)
Total Capacity: 1 TB
Onboard Controller: Samsung Presto S4LY027 (5-Core)
NAND Flash Memory: Samsung 236-Layer TLC V-NAND (V8)
DRAM Cache Size: 1 GB Low-Power DDR4X
Random Read Speed: Up to 1,850,000 IOPS
Random Write Speed: Up to 2,600,000 IOPS
Endurance Rating: 600 TB Written
Hardware Encryption: AES 256-bit; TCG/Opal v2.0
Power Consumption: 7.6W Read / 7.2W Write (Average)